Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process

被引：17

作者：

Lu, Chih-Hung ^{[1
]}

Hou, Tuo-Hung ^{[1
]}

Pan, Tung-Ming ^{[2
,3
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan

[3] Chang Gung Mem Hosp, Div Urol, Taoyuan 33302, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 12期

关键词：

HfO2; InGaZnO; ion-sensitive thin-film transistor (ISTFT); pH sensitivity; FIELD-EFFECT-TRANSISTORS; SENSORS; ENHANCEMENT; HYSTERESIS; OPERATION; DNA;

D O I：

10.1109/TED.2016.2614959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, we developed a low-voltage (V-DS = 0.5 V and V-GS = 0.8 V) InGaZnO ion-sensitive thin-film transistor (ISTFT) sensor using a high-kappa HfO2 sensing membrane grown by low-temperature atomic layer deposition. The InGaZnO TFT exhibited a low threshold voltage of 0.2 V, a high field-effect mobility of 5.9 cm(2)/V-s, a small subthreshold swing of 90 mV/decade, and high I-ON/I-OFF ratio of 2.4x10(7). The pH sensor based on an InGaZnO ISTFT device exhibits a high sensitivity of 60.5 mV/pH and good linearity in the pH range from 3 to 11. Moreover, such a pH ISTFT sensor presents a hysteresis width of 8 mV after a pH loop of 7 -> 4 -> 7 -> 10 -> 7 and a low drift rate of 2.5 mV/h at pH 7.

引用

页码：5060 / 5063

页数：4

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