Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process

被引：16
|
作者：
Lu, Chih-Hung [1 ]
Hou, Tuo-Hung [1 ]
Pan, Tung-Ming [2 ,3 ]
机构：
[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
[3] Chang Gung Mem Hosp, Div Urol, Taoyuan 33302, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 12期
关键词：
HfO2; InGaZnO; ion-sensitive thin-film transistor (ISTFT); pH sensitivity; FIELD-EFFECT-TRANSISTORS; SENSORS; ENHANCEMENT; HYSTERESIS; OPERATION; DNA;
D O I：
10.1109/TED.2016.2614959
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this brief, we developed a low-voltage (V-DS = 0.5 V and V-GS = 0.8 V) InGaZnO ion-sensitive thin-film transistor (ISTFT) sensor using a high-kappa HfO2 sensing membrane grown by low-temperature atomic layer deposition. The InGaZnO TFT exhibited a low threshold voltage of 0.2 V, a high field-effect mobility of 5.9 cm(2)/V-s, a small subthreshold swing of 90 mV/decade, and high I-ON/I-OFF ratio of 2.4x10(7). The pH sensor based on an InGaZnO ISTFT device exhibits a high sensitivity of 60.5 mV/pH and good linearity in the pH range from 3 to 11. Moreover, such a pH ISTFT sensor presents a hysteresis width of 8 mV after a pH loop of 7 -> 4 -> 7 -> 10 -> 7 and a low drift rate of 2.5 mV/h at pH 7.
引用
收藏
页码：5060 / 5063
页数：4
相关论文
共 50 条
  • [1] Highly Sensitive Low Power Ion-sensitive Organic Thin-Film Transistors
    Tang, Wei
    Zhao, Jiaqing
    Li, Qiaofeng
    Guo, Xiaojun
    2018 9TH INTHERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN FOR THIN-FILM TRANSISTORS (CAD-TFT), 2018, : 26 - 26
  • [2] Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors
    Chen, Yonghua
    Yu, Zhinong
    Li, Xuyang
    Cheng, Jin
    2018 9TH INTHERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN FOR THIN-FILM TRANSISTORS (CAD-TFT), 2018, : 22 - 22
  • [3] Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric
    Shao, Yang
    Xiao, Xiang
    He, Xin
    Deng, Wei
    Zhang, Shengdong
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (06) : 573 - 575
  • [4] Organic Thin-Film Transistors with Low Threshold Voltage Variation on Low-Temperature Substrates
    Gowrisanker, S.
    Ai, Y.
    Jia, H.
    Quevedo-Lopez, M. A.
    Alshareef, H. N.
    Trachtenberg, I.
    Stiegler, H.
    Edwards, H.
    Barnett, R.
    Gnade, B. E.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (03) : H50 - H53
  • [5] Ti doping enhanced alumina dielectrics for low-voltage thin-film transistors via low-temperature lightwave irradiation
    Wang, Sumei
    Xia, Guodong
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (08) : 5866 - 5871
  • [6] Ti doping enhanced alumina dielectrics for low-voltage thin-film transistors via low-temperature lightwave irradiation
    Sumei Wang
    Guodong Xia
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 5866 - 5871
  • [7] Threshold Voltage Tuning of Low-Voltage Organic Thin-Film Transistors
    Shang, Liwei
    Ji, Zhuoyu
    Wang, Hong
    Chen, Yingpin
    Lu, Congyan
    Liu, Xin
    Han, Maixing
    Liu, Ming
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (07) : 2127 - 2134
  • [8] Manufacturing and Characteristics of Low-Voltage Organic Thin-Film Transistors
    Klauk, Hagen
    Zschieschang, Ute
    2010 IEEE AND ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN (ICCAD), 2010, : 493 - 495
  • [9] Low-voltage organic thin-film transistors with large transconductance
    Klauk, Hagen
    Zschieschang, Ute
    Halik, Marcus
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)
  • [10] Low-temperature process for manufacturing all polymer thin-film transistors
    Meixner, R.
    Yildirim, F. A.
    Schliewe, R. R.
    Goebel, H.
    Bauhofer, W.
    Krautschneider, W.
    Polytronic 2005, Proceedings, 2005, : 197 - 199
12345