Formation and evolution of F nanobubbles in amorphous and crystalline Si

被引：19

作者：

Boninelli, S. ^{[1
,2
]}

Impellizzeri, G. ^{[1
,2
]}

Mirabella, S. ^{[1
,2
]}

Priolo, F. ^{[1
,2
]}

Napolitani, E. ^{[3
,4
]}

Cherkashin, N. ^{[5
]}

Cristiano, F. ^{[6
]}

机构：

[1] Univ Catania, MATIS CNR, INFM, I-95123 Catania, Italy

[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[3] Univ Padua, MATIS CNR, INFM, I-35131 Padua, Italy

[4] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[5] CEMES CNRS, F-31055 Toulouse, France

[6] CNRS, LAAS, F-31077 Toulouse, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 06期

关键词：

D O I：

10.1063/1.2969055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation and evolution of F-induced nanobubbles in Si was investigated. Si samples were preamorphized, implanted with F, and partially regrown by solid phase epitaxy (SPE). It is shown that nanobubbles are formed already in the amorphous side of partially regrown samples and are then incorporated in crystalline Si during SPE. The bubbles are interpreted as the result of the diffusion and coalescence of F atoms and dangling bonds already in the amorphous matrix. During high temperature annealing after SPE, F outdiffuses; correspondingly, the bubbles partially dissolve and transform from spherical- to cylinder-shaped bubbles. (C) 2008 American Institute of Physics.

引用

页数：3

共 16 条

[11] RAPID THERMAL AND PULSED LASER ANNEALING OF BORON FLUORIDE-IMPLANTED SILICON
NARAYAN, J
HOLLAND, OW
CHRISTIE, WH
WORTMAN, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2709 - 2716
[12] Activation energy for fluorine transport in amorphous silicon
Nash, GR
Schiz, JFW
Marsh, CD
Ashburn, P
Booker, GR
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (23) : 3671 - 3673
[13] FORMATION OF BUBBLES IN BF2+-IMPLANTED SILICON
NIEH, CW
CHEN, LJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (22) : 1528 - 1530
[14] Fluorine in silicon: Diffusion, trapping, and precipitation
Pi, XD
Burrows, CP
Coleman, PG
[J]. PHYSICAL REVIEW LETTERS, 2003, 90 (15) : 4 - 155901
[15] Observation of fluorine-vacancy complexes in silicon
Simpson, PJ
Jenei, Z
Asoka-Kumar, P
Robison, RR
Law, ME
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (09) : 1538 - 1540
[16] THE PASSIVATION OF ELECTRICALLY ACTIVE-SITES ON THE SURFACE OF CRYSTALLINE SILICON BY FLUORINATION
WEINBERGER, BR
DECKMAN, HW
YABLONOVITCH, E
GMITTER, T
KOBASZ, W
GAROFF, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 887 - 891

← 1 2 →