High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

被引：191

作者：

Kim, Tae-il ^{[1
]}

Jung, Yei Hwan ^{[1
]}

Song, Jizhou ^{[2
]}

Kim, Daegon ^{[1
]}

Li, Yuhang ^{[3
,4
,5
]}

Kim, Hoon-sik ^{[1
]}

Song, Il-Sun ^{[6
]}

Wierer, Jonathan J. ^{[7
]}

Pao, Hsuan An ^{[1
]}

Huang, Yonggang ^{[3
,4
]}

Rogers, John A. ^{[1
,6
,8
,9
]}

机构：

[1] Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[2] Univ Miami, Dept Mech & Aerosp Engn, Miami, FL 33146 USA

[3] Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

[4] Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA

[5] Harbin Inst Technol, Sch Astronaut, Harbin 150001, Peoples R China

[6] Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA

[7] Sandia Natl Labs, Albuquerque, NM 87185 USA

[8] Univ Illinois, Beckman Inst Adv Sci & Technol, Dept Chem, Urbana, IL 61801 USA

[9] Univ Illinois, Beckman Inst Adv Sci & Technol, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

SMALL | 2012年 / 8卷 / 11期

基金：

美国国家科学基金会;

关键词：

light-emitting diodes; gallium nitride; laser lift-off (LLO); transfer printing; flexible electronics;

D O I：

10.1002/smll.201200382

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from â̂1 mm × 1 mm to â̂25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts. © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1643 / 1649

页数：7

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