Phase Stabilization of Al:HfO2 Grown on InxGal1-xAs Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition

被引：22

作者：

Cianci, Elena ^{[1
]}

Molle, Alessandro ^{[1
]}

Lamperti, Alessio ^{[1
]}

Wiemer, Claudia ^{[1
]}

Spiga, Sabina ^{[1
]}

Fanciulli, Marco ^{[1
,2
]}

机构：

[1] IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20126 Milan, Italy

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 05期

关键词：

phase stabilization; high-k dielectrics; trimethyl-aluminum; atomic layer deposition; DIELECTRIC-PROPERTIES; GATE DIELECTRICS; 1ST-PRINCIPLES; FILMS; ENHANCEMENT; HFO2/AL2O3; CONSTANT; OXIDES; GAAS;

D O I：

10.1021/am405617q

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Al:HfO2 is grown on III-V compound substrates by atomic layer deposition after an in situ trimethylaluminum-based preconditioning treatment of the III-V surface. After post-deposition rapid thermal annealing at 700 degrees C, the cubic/tetragonal crystalline phase is stabilized and the chemical composition of the stack is preserved. The observed structural evolution of Al:HfO2 on preconditioned III-V substrates shows that the in-diffusion of semiconductor species from the substrate through the oxide is inhibited. Al-induced stabilization of the Al:HfO2 crystal polymorphs up to 700 degrees C can be used as a permittivity booster methodology with possibly important implications in the stack scaling issues of high-mobility III-V based logic applications.

引用

页码：3455 / 3461

页数：7

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