Anomalous LO phonon lifetime in AlAs -: art. no. 215502

被引：16
|
作者：
Canonico, M
Poweleit, C
Menéndez, J
Debernardi, A
Johnson, SR
Zhang, YH
机构：
[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
[2] Univ Trieste, Unita Ric, INFM, I-34014 Trieste, Italy
[3] SISSA, Dipartimento Fis Teor, I-34014 Trieste, Italy
[4] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
来源：
PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 21期
关键词：
D O I：
10.1103/PhysRevLett.88.215502
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The temperature dependence of the frequencies and linewidths of the Raman-active longitudinal optical (LO) phonons in GaAs and AlAs have been measured. The low-temperature lifetime of the LO phonon in AlAs is found to be 9.7 ps, very close to the corresponding GaAs value of 9.5 ps. This contradicts early theoretical predictions. The agreement between theory and experiment can be restored when the accidental degeneracy between the AlAs LO phonon frequency and a feature in the two-phonon density of states is taken into account.
引用
收藏
页码：2155021 / 2155024
页数：4
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