Recent Progress in Wet Patterning of Copper/Molybdenum Thin Films in Phosphoric Acid Solution for TFT Application

被引：0

作者：

Seo, Jong Hyun ^{[1
]}

Winkler, Joerg ^{[2
]}

机构：

[1] Korea Aerosp Univ, Dept Mat Engn, 200-1 Hwajeon Dong, Goyang 412791, South Korea

[2] PLANSEE Met GmbH, A-6600 Reutte, Austria

来源：

PROCEEDINGS OF CHINA DISPLAY/ASIA DISPLAY 2011 | 2011年

关键词：

Copper metallization; Thin film transistor; Molybdenum; Wet etching; Phosphoric acid;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The copper/molybdenum double layer was etched in the phosphoric acid based solution for the copper metallization of the thin film transistor. To reduce the rapid etch rate of the copper in the phosphoric acid based etchant, the additive was added into the solution. It was found that the copper dissolution rate can be effectively controlled by the addition of the additive. The additive helped the copper to form the passive salt film during the wet etching and the passive salt film formed on the copper surface act as a mass transport barrier. It resulted in moderate etch rate of the copper film in the solution.

引用

页码：581 / 582

页数：2