Defect formation in LT MBE InGaAs and GaAs

被引：2

作者：

Anisimova, L. L. ^{[1
]}

Gutakovskii, A. K.

Ivonin, I. V.

Preobrazhenskii, V. V.

Putyato, M. A.

Semyagin, B. R.

Subach, S. V.

机构：

[1] Tomsk VV Kuibyshev State Univ, Tomsk 634050, Russia

[2] Siberian Phys Tech Inst, Tomsk, Russia

[3] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk, Russia

来源：

JOURNAL OF STRUCTURAL CHEMISTRY | 2004年 / 45卷 / Suppl 1期

关键词：

molecular beam epitaxy; A(3)B(5) semiconductors; surface; structure; defect formation;

D O I：

10.1007/s10947-006-0101-6

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Results are obtained from the experimental studies (atomic force and transmission microscopy) of the influence of III/V flux ratio on the topography and internal structure of LT MBE films of InGaAs and GaAs. The layers are shown to contain both the surface growth defects - the volcano-like pits and microdrops of III group elements, and the bulk defects - dislocations, stacking faults, microtwins, and phase microheterogeneities. A high-temperature annealing results in the additional formation of thermal etching pits at the surface and the nanosized arsenic clusters in the bulk. The origin of the defects is discussed.

引用

页码：S96 / S102

页数：7

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