ZnO nanobelt/nanowire Schottky diodes formed by dielectrophoresis alignment across Au electrodes

被引：338

作者：

Lao, CS

Liu, J

Gao, PX

Zhang, LY

Davidovic, D

Tummala, R

Wang, ZL ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[4] Peking Univ, Coll Engn, Beijing 100871, Peoples R China

[5] Natl Ctr Nanosci & Technol, Beijing, Peoples R China

来源：

NANO LETTERS | 2006年 / 6卷 / 02期

关键词：

D O I：

10.1021/nl052239p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Rectifying diodes of single nanobelt/nanowire-based devices have been fabricated by aligning single ZnO nanobelts/nanowires across paired Au electrodes using dielectrophoresis. A current of 0.5 mu A at 1.5 V forward bias has been received, and the diode can bear an applied voltage of up to 10 V. The ideality factor of the diode is similar to 3, and the on-to-off current ratio is as high as 2000. The detailed IV characteristics of the Schottky diodes have been investigated at low temperatures. The formation of the Schottky diodes is suggested due to the asymmetric contacts formed in the dielectrophoresis aligning process.

引用

页码：263 / 266

页数：4

共 17 条

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