The effects of oxygen partial pressure on local structural properties for Ga-doped ZnO thin films

被引：54

作者：

Osada, M ^{[1
]}

Sakemi, T

Yamamoto, T

机构：

[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

[2] Sumitomo Heavy Ind Ltd, Ctr Res & Dev, Niihama, Ehime 7928588, Japan

[3] Kochi Univ Technol, Mat Design Ctr, Kochi 7828502, Japan

来源：

THIN SOLID FILMS | 2006年 / 494卷 / 1-2期

关键词：

e; electronics; optics and opto-electronics; 563. zinc oxide; 403. Raman scattering; 202; impurities;

D O I：

10.1016/j.tsf.2005.07.179

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on Raman scattering studies of Ga-doped ZnO thin films that were grown by intentionally changing oxygen partial pressure in order to study the influences of oxygen partial pressure on local structural properties of this material. Raman spectra of ZnO:Ga (3 wt.% Ga-doped) films revealed vibrational modes at 575 and 630 - 660 cm(-1) in addition to the host phonons of ZnO. These additional modes correspond to local vibrational modes associated with oxygen vacancy (V-O) and Ga impurity (GaZn), respectively. With increasing oxygen partial pressure (oxygen flow rate up to similar to 10 sccm), the 575-cm(-1) mode decreases in its intensity, indicating the reduced V-O concentration. Further increasing oxygen partial pressure (> 10 sccm), we find a substantial disorder apparent in host ZnO phonons and some additional modes. These results suggest that the oxygen-rich condition may cause the formation of compensating-defects such as oxygen interstitials (O-i), Zn vacancy (V-Zn) and their complexes (Ga-Zn-O-i, Ga-Zn -V-Zn), strongly reducing carrier concentration in this system. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：38 / 41

页数：4

共 21 条

[1] FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].

ARGUELLO, CA ;

ROUSSEAU, DL ;

PORTO, SPS .

PHYSICAL REVIEW, 1969, 181 (03) :1351-&

[2] Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li [J].

Bundesmann, C ;

Ashkenov, N ;

Schubert, M ;

Spemann, D ;

Butz, T ;

Kaidashev, EM ;

Lorenz, M ;

Grundmann, M .

APPLIED PHYSICS LETTERS, 2003, 83 (10) :1974-1976

[3]

Coutts TJ, 1999, ELEC SOC S, V99, P274

[4] High-pressure Raman spectroscopy study of wurtzite ZnO [J].

Decremps, F ;

Pellicer-Porres, J ;

Saitta, AM ;

Chervin, JC ;

Polian, A .

PHYSICAL REVIEW B, 2002, 65 (09) :921011-921014

[5] Deposition schemes for low cost transparent conductors for photovoltaics [J].

Delahoy, AE ;

Cherny, M .

THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS, 1996, 426 :467-477

[6] ZUM EINFLUSS VON WASSERSTOFF AUF DIE ELEKTRISCHE LEITFAHIGKEIT AN DER OBERFLACHE VON ZINKOXYDKRISTALLEN [J].

HEILAND, G .

ZEITSCHRIFT FUR PHYSIK, 1957, 148 (01) :15-27

[7] ZnO:Ga conducting-films grown by DC arc-discharge ionplating [J].

Hirasawa, H ;

Yoshida, M ;

Nakamura, S ;

Suzuki, Y ;

Okada, S ;

Kondo, K .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 67 (1-4) :231-236

[8] Growth and electrical properties of ZnO thin films deposited by novel ion plating method [J].

Iwata, K ;

Sakemi, T ;

Yamada, A ;

Fons, P ;

Awai, K ;

Yamamoto, T ;

Matsubara, M ;

Tampo, H ;

Niki, S .

THIN SOLID FILMS, 2003, 445 (02) :274-277

[9] Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN [J].

Kaczmarczyk, G ;

Kaschner, A ;

Hoffmann, A ;

Thomsen, C .

PHYSICAL REVIEW B, 2000, 61 (08) :5353-5357

[10] High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation [J].

Minami, T ;

Ida, S ;

Miyata, T .

THIN SOLID FILMS, 2002, 416 (1-2) :92-96

← 1 2 3 →