Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times

被引：8
作者：
Eberhardt, J [1 ]
Kasper, E [1 ]
机构：
[1] Univ Stuttgart, Inst Halbleitertech, D-70569 Stuttgart, Germany
来源：
SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 12期
关键词：
SiGe; heterojunction; bipolar transistor; transit frequency; transistor simulation; HBT;
D O I：
10.1016/S0038-1101(01)00211-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Our basic approach is to develop a symmetrical design with equal delay times for collector, base and the total load to simulate the high frequency behaviour of SiGe heterobipolar transistors (HBTs). On this base we have investigated the feasibility of SiGe HBTs with transit frequencies f(T) above 200 GHz. A symmetrical design reaching f(T) = 208 GHz is presented. The dependence of the high frequency behaviour on Ge content and vertical transistor design is shown. Critical parameters like the maximum current density and the breakthrough voltage are considered. An analytical model is compared to numerical simulations and experimental data. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：2097 / 2100
页数：4
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