Raman Spectroscopy Study of Rotated Double-Layer Graphene: Misorientation-Angle Dependence of Electronic Structure

被引:516
作者
Kim, Kwanpyo [1 ,2 ,3 ]
Coh, Sinisa [1 ,3 ]
Tan, Liang Z. [1 ,3 ]
Regan, William [1 ,3 ]
Yuk, Jong Min [1 ,3 ,4 ]
Chatterjee, Eric [1 ]
Crommie, M. F. [1 ,2 ,3 ]
Cohen, Marvin L. [1 ,2 ,3 ]
Louie, Steven G. [1 ,3 ]
Zettl, A. [1 ,2 ,3 ]
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Ctr Integrated Nanomech Syst, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[4] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
基金
美国国家科学基金会;
关键词
BILAYER GRAPHENE; LARGE-AREA; FILMS;
D O I
10.1103/PhysRevLett.108.246103
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a systematic Raman study of unconventionally stacked double-layer graphene, and find that the spectrum strongly depends on the relative rotation angle between layers. Rotation-dependent trends in the position, width and intensity of graphene 2D and G peaks are experimentally established and accounted for theoretically. Our theoretical analysis reveals that changes in electronic band structure due to the interlayer interaction, such as rotational-angle dependent Van Hove singularities, are responsible for the observed spectral features. Our combined experimental and theoretical study provides a deeper understanding of the electronic band structure of rotated double-layer graphene, and leads to a practical way to identify and analyze rotation angles of misoriented double-layer graphene.
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页数:6
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