Three dimensional CMOS image sensor cell simulation and optimization

被引：1

作者：

Paik, KH ^{[1
]}

Lee, SH ^{[1
]}

Lyu, JH ^{[1
]}

Lee, KH ^{[1
]}

Park, YK ^{[1
]}

Kong, JT ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, CAE Team, Yongin 449711, Gyeonggi, South Korea

来源：

SISPAD: 2005 International Conference on Simulation of Semiconductor Processes and Devices | 2005年

关键词：

D O I：

10.1109/SISPAD.2005.201483

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, we present the results of three-dimensional CMOS image sensor cell simulation. Electrical characteristics of the device are represented comprehensively. The methodology, describing saturation, charge-voltage conversion, and image lag of a CIS cell in a single simulation analysis, is expected to play a key role in future CMOS image sensor cell development.

引用

页码：103 / 106

页数：4