Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2

被引：423

作者：

Zhu, C. R. ^{[1
]}

Wang, G. ^{[1
]}

Liu, B. L. ^{[1
]}

Marie, X. ^{[2
]}

Qiao, X. F. ^{[3
]}

Zhang, X. ^{[3
]}

Wu, X. X. ^{[1
]}

Fan, H. ^{[1
]}

Tan, P. H. ^{[3
]}

Amand, T. ^{[2
]}

Urbaszek, B. ^{[2
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] Univ Toulouse, INSA CNRS UPS, LPCNO, F-31077 Toulouse, France

[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 12期

基金：

美国国家科学基金会;

关键词：

VALLEY POLARIZATION; BANDGAP;

D O I：

10.1103/PhysRevB.88.121301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use micro-Raman and photoluminescence (PL) spectroscopy at 300 K to investigate the influence of uniaxial tensile strain on the vibrational and optoelectronic properties of monolayer and bilayer MoS2 on a flexible substrate. The initially degenerate E' monolayer Raman mode is split into a doublet as a direct consequence of the strain applied to MoS2 through Van der Waals coupling at the sample-substrate interface. We observe a strong shift of the direct band gap of 48 meV/(% of strain) for the monolayer and 46 meV/% for the bilayer, whose indirect gap shifts by 86 meV/%. We find a strong decrease of the PL polarization linked to optical valley initialization for both monolayer and bilayer samples, indicating that scattering to the spin-degenerate Gamma valley plays a key role.

引用

页数：5

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