AZO/Ag/AZO multilayers electrodes evaluated using a photonic flux density figure of merit for solar cells applications

被引：32
作者：
Acosta, M. [1 ]
Mendez-Gamboa, J. [1 ]
Riech, I. [1 ]
Acosta, C. [1 ]
Zambrano, M. [1 ]
机构：
[1] Univ Yucatan, Engn Sch, AP 150 Cordemex, Merida 97310, Yucatan, Mexico
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2019年 / 127卷
关键词：
Transparent conductive oxide; Aluminum-doped zinc oxide; Thin silver films; RF magnetron sputtering; Optical properties; Electrical resistivity; OPTOELECTRONIC PROPERTIES; THIN-FILMS; TRANSPARENT; THICKNESS; LAYER;
D O I：
10.1016/j.spmi.2018.03.018
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Indium-free transparent and highly conductive multilayer AZO/Ag/AZO structures were grown by RF sputtering at room temperature on glass substrates varying the Ag film thickness from 2 to 15 nm. The AZO/Ag/AZO electrodes exhibited superior sheet resistance and optical properties compared to optimized AZO film. The best multilayer has a sheet resistance of 5.7 Omega/sq and average transmittance is about 75% in the visible light region. In order to evaluate the multilayer as TCO, we compared the Haacke figure of merit at a fixed wavelength and the one that considers the photonic flux density, for a CdTe and organic P3HT:PCBM absorber layer in solar cells. The best Haacke figure of merit value was 5.7 x 10(-2) Omega(-1) for 9 nm of Ag thickness, higher than those found up to now. Our indium-free multilayer deposited at room temperature has promising optoelectronic properties for flexible devices. (C) 2018 Elsevier Ltd. All rights reserved.
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页码：49 / 53
页数：5
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