Thermal stability of stacked self-assembled InP quantum dots in GaInP

被引：10
作者：
Jin-Phillipp, NY
Du, K
Phillipp, F
Zundel, M
Eberl, K
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 05期
关键词：
D O I：
10.1063/1.1446656
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal stability of stacked self-assembled InP quantum dots (QDs) embedded in Ga0.51In0.49P (GaInP) under ex situ rapid thermal annealing (RTA) is studied by photoluminescence spectroscopy and quantitative high-resolution electron microscopy. It is found that InP QDs intermix with surrounding GaInP, and that this is enhanced with increasing temperature and duration of RTA. The preferential direction of the intermixing and reshaping of the QDs changes at different stages of RTA. This anisotropy is attributed to strain-assisted interdiffusion, and is expected in stacked QDs of other material systems. (C) 2002 American Institute of Physics.
引用
收藏
页码：3255 / 3260
页数：6
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