Low-damage ash by atomic hydrogen for porous low-k/Cu interconnects

被引：0

作者：

Tomioka, K ^{[1
]}

Soda, E ^{[1
]}

Kobayashi, N ^{[1
]}

Mochidzuki, K ^{[1
]}

Takata, M ^{[1
]}

Uda, S ^{[1
]}

Yuba, Y ^{[1
]}

Akasaka, Y ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

Advanced Metallization Conference 2005 (AMC 2005) | 2006年

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Low-damage ash of photoresist after porous methyl silsesquioxane (MSQ) etching has been investigated using atomic hydrogen generated by heated tungsten catalyzer. Neither photoresist nor polymer residue was observed in the region of substrate temperatures (Ts) of 250 C and 300 C for a catalyzer temperature (Tc) of 1600 C, Ts from 200 C to 300 C for a Tc of 1800 C and Ts from 150 C to 300 C for a Tc of 2000 C. The ash process was optimized at a Ts of 180 C and a Tc of 2000 C because carbon depletion in porous MSQ film was suppressed.

引用

页码：399 / 403

页数：5

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