Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes

被引：26

作者：

Hu, Yushi ^{[1
]}

Perello, David ^{[1
]}

Yun, Minhee ^{[1
]}

Kwon, Deok-Hwang ^{[2
]}

Kim, Miyoung ^{[2
]}

机构：

[1] Univ Pittsburgh, Swanson Sch Engn, Dept Elect & Comp Engn, Pittsburgh, PA 15261 USA

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Res Inst Adv Mat, Seoul 151744, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 104卷

基金：

美国国家科学基金会;

关键词：

Resistive memory; ReRAM; Graphene; Bipolar; Unipolar; Filament; Titanium dioxide; Switching mechanism; TRANSITION;

D O I：

10.1016/j.mee.2012.11.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication of resistive random access memory (ReRAM) on both Si and PET flexible substrates using TiO2 as the dielectric spacer between Ag electrodes. Ag/TiO2/Ag ReRAM shows unipolar switching behavior with a ramping rate of 50 mV. We further examined the switching mechanism for Ag based ReRAM in the low resistive state (LRS) and high resistive states (HRS). To elucidate the impact of electrode material on the switching mechanism, we fabricated a graphene/TiO2/graphene ReRAM device and observed that the switching behavior changed from unipolar to bipolar due to the unique physical properties of graphene. This study demonstrates ReRAM based on Ag and graphene electrodes on both Si and PET substrates, and directly demonstrates the strong dependence of electrode materials on the switching mechanism. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：42 / 47

页数：6

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