High-Speed GaN-Based Blue Light-Emitting Diodes With Gallium-Doped ZnO Current Spreading Layer

被引：93
作者：
Liao, Chien-Lan [1 ]
Chang, Yung-Fu [1 ]
Ho, Chong-Lung [1 ]
Wu, Meng-Chyi [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 05期
关键词：
3-dB modulation bandwidth; atomic layer deposition (ALD); gallium-doped Zinc oxide (GZO); GaN; light-emitting diodes (LEDs);
D O I：
10.1109/LED.2013.2252457
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Conventional light-emitting diodes (LEDs) always pursue the high brightness required for solid-state lighting. However, they always exhibit very low frequency bandwidth of tens MHz. In this letter, we investigate the fabrication and characterization of high-speed GaN-based blue LEDs. The frequency response of LEDs is mainly limited by its diffusion capacitance and resistance, and the injected carriers in the active region of the device. Through appropriate device design, gallium-doped Zinc oxide film deposited by atomic layer deposition is used as the top contact layer with high lateral resistance to self-confine the current injection. In addition, a smaller bonding pad is used to reduce the RC time constant. Thus, the GaN-based blue LEDs with a 75-mu m diameter exhibit a 3-dB modulation bandwidth of 225.4 MHz and a light output power of 1.6 mW at the current of 35 mA. Such LEDs can be applied to visible light communication in future.
引用
收藏
页码：611 / 613
页数：3
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