GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography

被引：37

作者：

Su, Yan-Kuin ^{[1
,2
]}

Chen, Jian-Jhong ^{[1
,2
]}

Lin, Chuing-Liang ^{[4
]}

Chen, Shi-Ming ^{[4
]}

Li, Wen-Liang ^{[3
]}

Kao, Chien-Chih ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[4] Kun Shan Univ, Dept Elect Engn, Tainan 710, Taiwan

[5] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 08期

关键词：

GaN; light-emitting diode (LED); photonic crystal; patterned sapphire substrate; nanosphere lithography;

D O I：

10.1143/JJAP.47.6706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN-based light-emitting diodes (LEDs) grown on photonic crystal-patterned sapphire substrates (PCPSS) have been demonstrated. PCPSS was fabricated by nanosphere lithography, and the photonic crystal structure was the hexagonal-lattice pattern. The forward voltages of PCPSS and patterned sapphire substrates (PSS) LEDs were smaller than that of conventional sapphire substrates (CSS) LED, and it infers the epitaxial film quality of PCPSS and PSS LEDs has been slightly improved. The luminance intensity of PCPSS LED was 1.63 and 1.51 times higher than those of CSS and PSS LED at 2.0 mA injection current. The enhancement in the luminance intensity of PCPSS LED is attributed to the photonic crystal structure.

引用

页码：6706 / 6708

页数：3

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