Magnetic tunnel junctions with metastable bcc Co3Mn electrodes

被引:18
作者
Kunimatsu, Kazuma [1 ,2 ]
Tsuchiya, Tomoki [3 ,4 ]
Roy, Tufan [5 ]
Elphick, Kelvin [6 ]
Ichinose, Tomohiro [2 ]
Tsujikawa, Masahito [4 ,5 ]
Hirohata, Atsufumi [6 ]
Shirai, Masafumi [3 ,4 ,5 ]
Mizukami, Shigemi [2 ,3 ,4 ]
机构
[1] Tohoku Univ, Dept Appl Phys, Aoba 6-6-05, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, WPI Adv Inst Mat Res, Katahira 2-1-1, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, Core Res Cluster CRC, Ctr Sci & Innovat Spintron CSIS, Sendai, Miyagi 9808577, Japan
[4] Tohoku Univ, Ctr Spintron Res Network CSRN, Sendai, Miyagi 9808577, Japan
[5] Tohoku Univ, Res Inst Elect Commun RIEC, Sendai, Miyagi 9808579, Japan
[6] Univ York, Dept Elect Engn, York YO10 5DD, N Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
magnetic tunnel junction; tunnel magnetoresistance; MgO; metastable alloys; ROOM-TEMPERATURE; EPITAXIAL-GROWTH; MAGNETORESISTANCE; CO;
D O I
10.35848/1882-0786/aba883
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied magnetic tunnel junctions (MTJs) with a MgO(001) barrier and metastable bcc Co3Mn(001) disordered alloy electrodes. A tunnel magnetoresistance (TMR) ratio was approximately 200%-250% observed at room temperature. We successfully observed the TMR ratio greater than 600% at 10 K which was higher than the past reported value of MgO-based MTJs with ultrathin bcc Co(001) electrodes. However, our experimental value was still much lower than the past theoretical prediction in bcc Co/MgO/Co(001) MTJs. We discuss some differences in the bulk band structure affecting the TMR effect for bcc Co and bcc Co3Mn.
引用
收藏
页数:5
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