Low critical current for spin transfer in magnetic tunnel junctions

被引：33
作者：
Meng, H
Wang, J
Wang, JP
机构：
[1] Univ Minnesota, Ctr Micromagnet & Informat Technol, MINT, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 08期
关键词：
D O I：
10.1063/1.2179124
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a novel approach to reduce the critical current density for spin transfer in nanoscale magnetic tunnel junction (MTJ) structures. By integrating a spin valve and a MTJ structure with antiparallel pinned layers, the dc critical switching current density is reduced by one order of magnitude (2x10(6) A/cm(2)) at room temperature. The magnetoresistive (MR) properties of the MTJ + spin-valve device are dominated by the MTJ layers. The MR ratio is 15.8% with resistance area product of 4.5 Omega mu m(2). This demonstration opens a window for high-density magnetic random access memory design. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 24 条
[1]   Spin-polarized current switching of a Co thin film nanomagnet [J].
Albert, FJ ;
Katine, JA ;
Buhrman, RA ;
Ralph, DC .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3809-3811
[2]  
ATSUSHI T, 2004, IEEE T MAGN, V40, P203
[3]   Emission of spin waves by a magnetic multilayer traversed by a current [J].
Berger, L .
PHYSICAL REVIEW B, 1996, 54 (13) :9353-9358
[4]   Reducing the critical current for short-pulse spin-transfer switching of nanomagnets [J].
Braganca, PM ;
Krivorotov, IN ;
Ozatay, O ;
Garcia, AGF ;
Emley, NC ;
Sankey, JC ;
Ralph, DC ;
Buhrman, RA .
APPLIED PHYSICS LETTERS, 2005, 87 (11)
[5]   Magnetic tunnel junction performance versus barrier thickness:: NiFe/AlOx/NiFe junctions fabricated from a wedged Al layer [J].
Covington, M ;
Nowak, J ;
Song, D .
APPLIED PHYSICS LETTERS, 2000, 76 (26) :3965-3967
[6]  
DAUGHTON JM, 2004, Patent No. 6744086
[7]   Enhancing current-perpendicular-to-plane magnetoresistance by adding interfaces within ferromagnetic layers [J].
Eid, K ;
Pratt, WP ;
Bass, J .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) :3445-3449
[8]   Adjustable spin torque in magnetic tunnel junctions with two fixed layers [J].
Fuchs, GD ;
Krivorotov, IN ;
Braganca, PM ;
Emley, NC ;
Garcia, AGF ;
Ralph, DC ;
Buhrman, RA .
APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3
[9]   Spin-transfer effects in nanoscale magnetic tunnel junctions [J].
Fuchs, GD ;
Emley, NC ;
Krivorotov, IN ;
Braganca, PM ;
Ryan, EM ;
Kiselev, SI ;
Sankey, JC ;
Ralph, DC ;
Buhrman, RA ;
Katine, JA .
APPLIED PHYSICS LETTERS, 2004, 85 (07) :1205-1207
[10]   Spin-polarized current induced switching in Co/Cu/Co pillars [J].
Grollier, J ;
Cros, V ;
Hamzic, A ;
George, JM ;
Jaffrès, H ;
Fert, A ;
Faini, G ;
Ben Youssef, J ;
Legall, H .
APPLIED PHYSICS LETTERS, 2001, 78 (23) :3663-3665
123