Experimental and theoretical study of polarized photoluminescence caused by anisotropic strain relaxation in nonpolar a-plane textured ZnO grown by a low-pressure chemical vapor deposition

被引：11

作者：

Lai, Chih-Ming ^{[1
]}

Huang, Yu-En ^{[2
]}

Kou, Kuang-Yang ^{[3
]}

Chen, Chien-Hsun ^{[4
]}

Tu, Li-Wei ^{[5
,6
]}

Feng, Shih-Wei ^{[2
]}

机构：

[1] Ming Chuan Univ, Dept Elect Engn, Taoyuan 333, Taiwan

[2] Natl Univ Kaohsiung, Dept Appl Phys, Kaohsiung 811, Taiwan

[3] Cent Police Univ, Dept Traff Sci, Taoyuan 333, Taiwan

[4] Ind Technol Res Inst, Green Energy & Environm Res Labs, Hsinchu 310, Taiwan

[5] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[6] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 02期

关键词：

OPTICAL-PROPERTIES;

D O I：

10.1063/1.4926978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anisotropic strain relaxation and the resulting degree of polarization of photoluminescence (PL) in nonpolar a-plane textured ZnO are experimentally and theoretically studied. A thicker nonpolar a-plane textured ZnO film enhances the anisotropic in-plane strain relaxation, resulting in a larger degree of polarization of PL and better sample quality. Anisotropic in-plane strains, sample quality, and degree of polarization of PL in nonpolar a-plane ZnO are consequences of the degree of anisotropic in-plane strain relaxation. By the k.p perturbation approach, simulation results of the variation of the degree of polarization for the electronic transition upon anisotropic in-plane strain relaxation agree with experimental results. (C) 2015 AIP Publishing LLC.

引用

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