Growth and magnetic properties of novel ferromagnetic semiconductor (Zn, Cr)Te

被引：30

作者：

Kuroda, S ^{[1
]}

Ozaki, N ^{[1
]}

Nishizawa, N ^{[1
]}

Kumekawa, T ^{[1
]}

Marcet, S ^{[1
]}

Takita, K ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2005年 / 6卷 / 06期

关键词：

magnetic semiconductors; spintronics; molecular beam epitaxy; II-VI compounds; ferromagnetism; magnetic circular dichroism; carrier doping; double exchange interaction;

D O I：

10.1016/j.stam.2005.05.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetic properties of a novel ferromagnetic semiconductor (Zn, Cr)Te were investigated. Zn1-xCrxTe thin films, both without and with the additional hole doping by nitrogen, were grown by molecular beam epitaxy. In the magnetization measurement on Zn1-xCrxTe without carrier doping, the ferromagnetic behaviors such as a hysteresis loop in the magnetization vs. magnetic field curve were observed. Similar hysteretic behaviors in the field dependence were reproduced in the magnetic circular dichroism measurement. The ferromagnetic transition temperature TC deduced from Arrott plot increased almost linearly with Cr composition with the maximum T-C = 275 K at a Cr composition of x = 0. 17. The ferromagnetic behaviors observed in the undoped samples were found to be suppressed upon the p-type doping with nitrogen. These experimental findings are discussed based on the double exchange mechanism and the suppression of ferromagnetism by the hole doping is interpreted as due to the shift of the Fermi level in the Cr 3d level with the acceptor doping. (c) 2005 Elsevier Ltd. All fights reserved.

引用

页码：558 / 564

页数：7

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