Room-temperature 1.54μm er3+ photoluminescence from Er-doped silicon-rich silicon oxide film grown by magnetron sputtering

被引：11

作者：

Yuan, FC ^{[1
]}

Ran, GZ

Chan, Y

Zhang, BR

Qiao, YP

Fu, JS

Qin, GG

Ma, ZC

Zong, WH

机构：

[1] Peking Univ, Dept Phys, Beijing 1000871, Peoples R China

[2] Quanzhou Teachers Coll, Dept Phys, Quanzhou 362000, Peoples R China

[3] Minist Elect Ind, Inst 13, Shijiazhuang 050051, Peoples R China

来源：

ACTA PHYSICA SINICA | 2001年 / 50卷 / 12期

关键词：

erbium; silicon-rich silicon oxide; photoluminescence; nc-Si;

D O I：

10.7498/aps.50.2487

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Room-temperature photoluminescence (PL) has been observed from Er-doped silicon-rich silicon oxide films grown by magnetron sputtering. For all kinds of silicon-rich silicon oxide films grown with different excess-Si contents, each PL spectrum has two peaks at 1.54 and 1.38 mum, which originate from Er3+ and a certain kind of defects, respectively, in the silicon-rich silicon oxide. It was found that 1.54 and 1.38 mum PL peak intensities are correlated with each other. The PL intensity-dependence on the excess - Si content and annealing temperature was studied in detail.

引用

页码：2487 / 2491

页数：5

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