Influence of MBE Growth Parameters on Film Properties of ZnSnAs2: Mn Thin Films on InP Substrates

被引：0
作者：
Ogo, M. [1 ]
Takahashi, K. [1 ]
Hidaka, S. [1 ]
Toyota, H. [1 ]
Kato, T. [1 ]
Uchitomi, N. [1 ]
机构：
[1] Nagaoka Univ Tech, Nagaoka Univ Technol, Dept Elect Engn, 1603-1 Kamitomioka Cho, Nagaoka, Niigata 9402188, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
关键词：
Semiconductor spintronics; ZnSnAs2; Molecular beam epitaxy; Ferromagnetic semiconductor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the influence of growth parameters on the film properties of multinary ZnSnAs2 thin films with and without Mn doping grown by molecular beam epitaxy (MBE) on InP substrates. As growth parameters, the substrate temperature and the beam equivalent pressure (BEP) were varied. The most stoichiometric ZnSnAs2 thin film was obtained when the substrate temperature was 340 degrees C. We found that the high-quality Mn-doped ZnSnAs2 (ZnSnAs2: Mn) thin films can be realized by decreasing the beam flux of Zn source.
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