Influence of MBE Growth Parameters on Film Properties of ZnSnAs2: Mn Thin Films on InP Substrates

被引：0
作者：
Ogo, M. [1 ]
Takahashi, K. [1 ]
Hidaka, S. [1 ]
Toyota, H. [1 ]
Kato, T. [1 ]
Uchitomi, N. [1 ]
机构：
[1] Nagaoka Univ Tech, Nagaoka Univ Technol, Dept Elect Engn, 1603-1 Kamitomioka Cho, Nagaoka, Niigata 9402188, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
关键词：
Semiconductor spintronics; ZnSnAs2; Molecular beam epitaxy; Ferromagnetic semiconductor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the influence of growth parameters on the film properties of multinary ZnSnAs2 thin films with and without Mn doping grown by molecular beam epitaxy (MBE) on InP substrates. As growth parameters, the substrate temperature and the beam equivalent pressure (BEP) were varied. The most stoichiometric ZnSnAs2 thin film was obtained when the substrate temperature was 340 degrees C. We found that the high-quality Mn-doped ZnSnAs2 (ZnSnAs2: Mn) thin films can be realized by decreasing the beam flux of Zn source.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] MBE growth of Mn-doped ZnSnAS2 thin films
    Asubar, Joel T.
    Jinbo, Yoshio
    Uchitomi, Naotaka
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (03) : 929 - 932
  • [2] Growth and characterization of Ga doped ZnSnAs2 thin films on InP substrates
    Kato, Takahiro
    Uchiyama, Takashi
    Toyota, Hideyuki
    Uchitomi, Naotaka
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 6, 2015, 12 (06): : 512 - 515
  • [3] Magnetotransport properties of MnAs/ZnSnAs2/ZnSnAs2: Mn ferromagnet/semiconductor hybrid structures
    Oomae, Hiroto
    Jinbo, Yoshio
    Toyota, Hideyuki
    Uchitomi, Naotaka
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (07): : 1336 - 1339
  • [4] Anomalous Temperature Dependence of Magnetic Properties in Mn-doped ZnSnAs2 Epitaxial Thin Films
    Hidaka, Shiro
    Toyota, Hideyuki
    Uchitomi, Naotatka
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [5] Low-temperature heteroepitaxial growth of InAlAs layers on ZnSnAs2/InP(001)
    Oomae, Hiroto
    Suzuki, Akiko
    Toyota, Hideyuki
    Nakamura, Shin'ichi
    Uchitomi, Naotaka
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 6, 2015, 12 (06): : 516 - 519
  • [6] Crystalline Quality and Structure of MBE-Grown Ferromagnetic Semiconductor ZnSnAs2:Mn Thin Films Revealed by High-Resolution X-ray Diffraction Measurements
    Uchitomi, Naotaka
    Toyota, Hideyuki
    Takahashi, Toshio
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS, 2016, 230 (04): : 499 - 508
  • [7] High-Resolution X-ray Diffraction Studies of ZnSnAs2 Epitaxial Films Nearly Lattice-matched to InP Substrates
    Asubar, Joel T.
    Agatsuma, Yuji
    Yamaguchi, Hiroshi
    Nakamura, Shin Ichi
    Jinbo, Yoshio
    Uchitomi, Naotaka
    PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND SYSTEMS, 2010, 3 (02): : 1351 - 1356
  • [8] MBE growth of Mn-doped Zn-Sn-As compounds on (001) InP substrates
    Asubar, J. T.
    Kato, A.
    Kambayashi, T.
    Nakamura, S.
    Jinbo, Y.
    Uchitomi, N.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 656 - 661
  • [9] MBE growth of MnGeP2 thin films
    Minami, K.
    Smirnov, V. M.
    Yuasa, H.
    Jogo, J.
    Nagatsuka, T.
    Ishibashi, T.
    Sato, K.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E2225 - E2228
  • [10] MBE growth and properties of GeMn thin films on (001) GaAs
    Tsuchida, R.
    Asubar, J. T.
    Jinbo, Y.
    Uchitomi, N.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (03) : 937 - 940
12345