Characterisation of temperature sensitive parameters of selected silicon and silicon-carbide power devices

被引：0

作者：

Nowak, Mieczyslaw ^{[1
]}

Rabkowski, Jacek ^{[1
]}

Barlik, Roman ^{[1
]}

机构：

[1] Warsaw Univ Sci & Technol, Inst Sterowania & Elekt Przemyslowej, PL-00662 Warsaw, Poland

来源：

PRZEGLAD ELEKTROTECHNICZNY | 2008年 / 84卷 / 07期

关键词：

temperature sensitive parameters; silicon carbide; SiC-JFET; IGBT; device characterization;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the paper, results of laboratory investigation of representative samples of semiconductor silicon and silicon-carbide power devices, such as PiN diode. Shottky diode, IGBT and JFET, are presented. With use of a thermal chamber the characteristics of temperature sensitive parameters for selected types of devices were determined by measurements in range 25 - 150 grad C using short pulses, which are not able to disturb thermal conditions.

引用

页码：12 / 16

页数：5

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