Lattice mismatch in a bimetallic core-shell nanoparticle will cause strain in the epitaxial shell layer, and if it reaches the critical layer thickness misfit dislocations will appear in order to release the increasing strain. These defects are relevant since they will directly impact the atomic and electronic structures thereby changing the physical and chemical properties of the nanoparticles. Here we report the direct observation and evolution through aberration-corrected scanning transmission electron microscopy of dislocations in AuPd core-shell nanoparticles. Our results show that first Shockley partial dislocations (SPD) combined with stacking faults (SF) appear at the last Pd layer; then, as the shell grows the SPDs and SFs appear at the interface and combine with misfit dislocations, which finally diffuse to the free surfaces due to the alloying of Au into the Pd shell. The critical layer thickness was found to be at least 50% greater than in thin films, confirming that shell growth on nanoparticles can sustain more strain due to the tridimensional nature of the nanoparticles. (C) 2012 Elsevier B.V. All rights reserved.
机构:
Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Akita, T.
;
Hiroki, T.
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Prefecture Univ, Dept Mat Sci, Sakai, Osaka 5998531, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Hiroki, T.
;
Tanaka, S.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Tanaka, S.
;
Kojima, T.
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Prefecture Univ, Ctr Radiat Res, Sakai, Osaka 5998531, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Kojima, T.
;
Kohyama, M.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Kohyama, M.
;
Iwase, A.
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Prefecture Univ, Dept Mat Sci, Sakai, Osaka 5998531, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Iwase, A.
;
Hori, F.
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Prefecture Univ, Dept Mat Sci, Sakai, Osaka 5998531, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Ding, Yong
;
Fan, Fengru
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Xiamen Univ, Dept Chem, Xiamen 361005, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Fan, Fengru
;
Tian, Zhongqun
论文数: 0引用数: 0
h-index: 0
机构:
Xiamen Univ, Dept Chem, Xiamen 361005, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Tian, Zhongqun
;
Wang, Zhong Lin
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
机构:
Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Akita, T.
;
Hiroki, T.
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Prefecture Univ, Dept Mat Sci, Sakai, Osaka 5998531, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Hiroki, T.
;
Tanaka, S.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Tanaka, S.
;
Kojima, T.
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Prefecture Univ, Ctr Radiat Res, Sakai, Osaka 5998531, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Kojima, T.
;
Kohyama, M.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Kohyama, M.
;
Iwase, A.
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Prefecture Univ, Dept Mat Sci, Sakai, Osaka 5998531, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
Iwase, A.
;
Hori, F.
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Prefecture Univ, Dept Mat Sci, Sakai, Osaka 5998531, JapanNatl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Device, Ikeda, Osaka 5638577, Japan
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Ding, Yong
;
Fan, Fengru
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Xiamen Univ, Dept Chem, Xiamen 361005, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Fan, Fengru
;
Tian, Zhongqun
论文数: 0引用数: 0
h-index: 0
机构:
Xiamen Univ, Dept Chem, Xiamen 361005, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Tian, Zhongqun
;
Wang, Zhong Lin
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA