Optical fiber doped with a nano-semiconductor layer of InP

In this article, a fiber with a nano-semiconductor layer locating between the Si-core and Si-cladding is fabricated. The improving technique called MCVD which is one of the important preparations of optical fiber is adopted. InP is chosen as the semiconductor and a fiber with a nano-layer is received, the thickness of which is only 10nm. On the basis of this structure of the fiber, it is call as nano-semiconductor layer fiber (NSLF). Through calculating the change of forbidden bandwidth with the theory of quantum size effect testifies, we rind out that this NSLF has the amplification. Finally, in the examination, a light with the wavelength of 532nm injects in a section of 1cm of NSLF, a good gain from the wavelength of 906nm-1044nm; 1080nm-1491nm; 1624nm-1596nm is received. Above all, we confidently believe this NSLF has a good amplification between some ranges of the wavelength.