Noise Extraction and Model Simulation of Deep Submicron Metal-Oxide Semiconductor Devices

The size of metal-oxide semiconductor (MOS) devices is reduced to deep submicron level, which makes the thickness of SiO2 thin layer exceed its physical limit and the reliability of devices will be reduced. The characteristics of low-frequency noise can indirectly reflect the reliability of devices. Therefore, many researchers regard improving low-frequency noise as a way to improve the reliability of devices. The traditional siliconbased metal-oxide-semiconductor field effect transistor (MOSFET) is taken as the research object, and the noise characteristics of the device are studied by quantum Monte Carlo method. The current power spectral densities of gate and drain are extracted from the current fluctuation of the device, and the correlation analysis is made to calculate the noise parameters of the device. At the same time, the mesoscopic shot noise in deep submicron devices is studied, the conditions for testing the noise are analyzed, and the specific testing methods are put forward. During the experiment, the noise characteristic data obtained by the quantum Monte Carlo method are compared with those in the literature. The results show that the noise characteristic data obtained by the method is accurate. The mesoscopic shot noise of the device is tested, and an 85 K shot noise measurement system is established. The results show that the system can accurately test this kind of noise.