Comprehensive physical studies on nanostructured Zn-doped CdSe thin films

被引:41
作者
Alasvand, Afshin [1 ]
Kafashan, Hosein [1 ]
机构
[1] Islamic Azad Univ, Ahvaz Branch, Dept Mat Sci & Engn, Ahvaz, Iran
关键词
CdSe nanostructures; Electrochemical deposition; Optical conductivity; Zn-doped; Dielectric; ELECTRICAL-PROPERTIES; ELECTROCHEMICAL PROPERTIES; OPTOELECTRONIC PROPERTIES; OPTICAL-PROPERTIES;
D O I
10.1016/j.jallcom.2019.03.096
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electrochemically deposited un- and Zn-doped CdSe nanostructures have been examined in this study. An aqueous solution having 3CdSO(4)center dot 8H(2)O, SeO2, and various amounts of ZnSO4 center dot 7H(2)O was used to deposition un- and Zn-doped CdSe samples. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) with energy dispersive X-ray analysis (EDXA) attachment, atomic force microscopy (AFM), room temperature photoluminescence (PL), and UV-Vis spectroscopy have been served to study the impact of Zn-dopant on the physical characteristics of CdSe thin films. All samples had a cubic crystalline system and their crystallite size was 7-9 nm. The lattice constant (a), unit cell volume (V), and the interplanar distance of CdSe samples were reduced after Zn-doping. FESEM images presented grain-like morphology for all samples. According to AFM results, the surface smoothness of Zn-doped CdSe samples was improved compared to the undoped CdSe sample. Two observed PL emission peaks at 564 and 690 nm were associated with the recombination of electron-hole and the near band emission (NBE) of CdSe, respectively. The intensity of PL spectra of CdSe samples was decreased after Zn-doping, which related to the generation of non-radiative relaxation of electron transition. According to UV-Vis spectroscopy results, the E-g of undoped CdSe sample was 1.73 eV that it reduced to 1.67 eV for Zn-doped CdSe samples. The optical- and electrical conductivity of CdSe thin films have been improved due to Zn-doping. Accordingly, the obtained results confirmed that the Zn-dopant plays a key role in the physical properties of nanostructured CdSe thin films. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码:108 / 118
页数:11
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