Electric-field and thermally-activated failure mechanisms of AlGaN/GaN High Electron Mobility Transistors

被引：5

作者：

Zanoni, Enrico ^{[1
]}

Meneghesso, Gaudenzio ^{[1
]}

Meneghini, Matteo ^{[1
]}

Stocco, Antonio ^{[1
]}

Rampazzo, Fabiana ^{[1
]}

Silvestri, Riccardo ^{[1
]}

Rossetto, Isabella ^{[1
]}

Ronchi, Nicolo ^{[1
]}

机构：

[1] Univ Padua, Dipartimento Ingn Informaz, I-35131 Padua, Italy

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES | 2011年 / 41卷 / 08期

关键词：

CRITICAL VOLTAGE; DEGRADATION;

D O I：

10.1149/1.3631501

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Main failure modes of AlGaN/GaN HEMTs can be divided into three categories: 1) Catastrophic increase of gate leakage, accompanied by an increase in trap density which closely resembles time dependent dielectric breakdown effects of MOS structures; 2) hot-electron and trap-induced effects, which induce increase in parasitic drain resistance and threshold voltage shifts; 3) thermally-activated degradation of drain current, which has been observed especially during long-term accelerated tests, with a very wide range of activation energies, from 1.05 eV to 2.47 eV. In the following, some recent results concerning these three failure modes are presented, together with some hypothesis on the degradation mechanisms involved.

引用

页码：237 / 249

页数：13

共 11 条

[1]

[Anonymous], IEEE INT REL PHYS S

[2] Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements [J].

Chini, A. ;

Esposto, M. ;

Meneghesso, G. ;

Zanoni, E. .

ELECTRONICS LETTERS, 2009, 45 (08) :426-U61

[3] Critical voltage for electrical degradation of GaN high-electron mobility transistors [J].

Joh, Jungwoo ;

del Alamo, Jesus A. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) :287-289

[4] Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface [J].

Jung, Helmut ;

Behtash, Reza ;

Thorpe, James R. ;

Riepe, Klaus ;

Bourgeois, Franck ;

Blanck, Herve ;

Chuvilin, Andrey ;

Kaiser, Ute .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 :S976-S979

[5] Status of Reliability of GaN-Based Heterojunction Field Effect Transistors [J].

Leach, Jacob H. ;

Morkoc, Hadis .

PROCEEDINGS OF THE IEEE, 2010, 98 (07) :1127-1139

[6]

Lee SM, 2008, INT REL PHY, P446, DOI 10.1109/RELPHY.2008.4558926

[7] Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors [J].

Lo, Chien-Fong ;

Liu, Lu ;

Kang, Tsung-Sheng ;

Davies, Ryan ;

Gila, Brent P. ;

Pearton, S. J. ;

Kravchenko, I. I. ;

Laboutin, O. ;

Cao, Yu ;

Johnson, Wayne J. ;

Ren, Fan .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (07) :H264-H267

[8] Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors [J].

Makaram, Prashanth ;

Joh, Jungwoo ;

del Alamo, Jesus A. ;

Palacios, Tomas ;

Thompson, Carl V. .

APPLIED PHYSICS LETTERS, 2010, 96 (23)

[9]

Marcon D, 2010, IEDM, P472

[10]

SAUNIER P, 2007, P IEEE DRC, P35

← 1 2 →