Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

被引：1

作者：

Lendyashova, V. V. ^{[1
,2
]}

Ilkiv, I. V. ^{[1
]}

Borodin, B. R. ^{[3
]}

Ubyivovk, E. V. ^{[1
]}

Reznik, R. R. ^{[1
,2
,4
,5
]}

Talalaev, V. G. ^{[6
]}

Cirlin, G. E. ^{[1
,2
,4
,5
]}

机构：

[1] St Petersburg State Univ, St Petersburg, Russia

[2] Alferov Univ, St Petersburg, Russia

[3] Ioffe Phys Tech Inst RAS, St Petersburg, Russia

[4] ITMO Univ, St Petersburg, Russia

[5] Inst Analyt Instrumentat RAS, St Petersburg, Russia

[6] Martin Luther Univ Halle Wittenberg, Halle, Germany

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2022年 / 15卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

quantum dots; semiconductors; molecular beam epitaxy; SI; LASERS; GAAS;

D O I：

10.18721/JPM.153.214

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The fabrication of composite material with embedded III-V quantum dots is of great interest due to promising silicon-based light emitting devices. In this work, the growth of self-assembled InAs quantum dots on Si substrates as well as subsequent capping layer for-mation by molecular beam epitaxy is presented. The evolution of size, density and shape of QDs are characterized by atomic-force microscopy. Bimodal size distribution of QDs at the submonolayer InAs coverage was observed. Full embedding into silicon matrix and dislocation free crystal structure of InAs QDs were confirmed by transmission electronic microscopy.

引用

页码：75 / 79

页数：5

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