Molecular-beam epitaxy of BeTe layers on GaAs substrates

被引：1

作者：

Tournié, E ^{[1
]}

Bousquet, V ^{[1
]}

Faurie, JP ^{[1
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

BeTe; molecular-beam epitaxy; RHEED; critical thickness;

D O I：

10.1016/S0022-0248(98)01384-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigate the MBE growth and structural quality of BeTe layers on GaAs(001) substrates. We show that although BeTe nucleates in a 2D mode at typical ZnSe-MBE temperature, the growth conditions of BeTe and ZnSe are only marginally compatible. We determine the surface reconstruction of BeTe layers. The: critical thickness for strain relaxation is 120 nm. However. the relaxation rare is very slow and high-quality samples can be obtained above the critical thickness. which might be a consequence of the large covalency of BeTe compound. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：494 / 497

页数：4

共 8 条

[1] Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer [J].