Connecting electrical and molecular properties of semiconducting polymers for thin-film transistors

被引：23

作者：

Chabinyc, Michael L. ^{[1
]}

Jimison, Leslie H. ^{[2
]}

Rivnay, Jonathan ^{[2
]}

Salleo, Alberto ^{[2
,3
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[3] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA

来源：

MRS BULLETIN | 2008年 / 33卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/mrs2008.140

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An overview of recent work on the connection between electrical and molecular properties of semiconducting polymers for thin-film transistors (TFTs) is presented. A description of the molecular packing and microstructure of amorphous to semicrystalline semiconducting polymers is presented. The features of basic models for electrical transport in TFTs are discussed. These studies indicate that defect states and traps are as important as ordered domains for understanding transport in semiconducting polymers. Advanced methods, such as electric force microscopy, useful for measuring the characteristics of defect states and charge traps, are briefly reviewed.

引用

页码：683 / 689

页数：7

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