Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)

被引：35

作者：

Sleiman, A. ^{[1
]}

Mabrook, M. F. ^{[1
]}

Nejm, R. R. ^{[2
]}

Ayesh, A. ^{[2
]}

Al Ghaferi, A. ^{[3
]}

Petty, M. C. ^{[4
]}

Zeze, D. A. ^{[4
]}

机构：

[1] Bangor Univ, Sch Elect Engn, Bangor LL57 1UT, Gwynedd, Wales

[2] United Arab Emirates Univ, Dept Phys, Al Ain, U Arab Emirates

[3] Masdar Inst, Abu Dhabi, U Arab Emirates

[4] Univ Durham, Sch Engn & Comp Sci, Durham DH1 3LE, England

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

MEMORY; BISTABILITY; FILMS;

D O I：

10.1063/1.4737599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical and memory behavior of organic bistable memory devices in the form of metal-embedded insulator-metal (MIM) structure are described. The devices utilize layer-by-layer (LbL) deposited single walled carbon nanotubes (SWCNTs) as charge traps embedded between two polymethylmethacrylate (PMMA) insulating layers. The stack was sandwiched between two aluminium electrodes to form an Al/PMMA/SWCNTs/PMMA/Al structure. The current-voltage (I-V) characteristics of the devices exhibit electrical bistability and non-volatile memory characteristics in terms of switching between high conductive (ON) and low conductive (OFF) states. The different conductive states were programmed by application of a positive and negative voltage pulse for the ON and OFF states, respectively. A maximum ON/OFF ratio of 2 x 10(5) is achieved at low reading voltage of 1V. Space-charge-limited-current (SCLC) conduction model was used to describe the carriers transport and the electrical bistability in the devices, which was attributed to the trapping and detrapping of electrons inside the SWCNTs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737599]

引用

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