Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

被引：152

作者：

Starschich, S. ^{[1
]}

Griesche, D. ^{[1
]}

Schneller, T. ^{[1
]}

Waser, R. ^{[1
,2
]}

Boettger, U. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech 2, D-52074 Aachen, Germany

[2] Forschungszentrum Julich, Peter Grunberg Inst 7, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 20期

关键词：

THIN-FILMS;

D O I：

10.1063/1.4879283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 mu C/cm(2). The samples were prepared with 5.2mol.% yttrium-doping and the thickness varied from 18nm to 70nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO2. (C) 2014 AIP Publishing LLC.

引用

页数：4

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