Effect of oxygen plasma treatment of indium tin oxide for organic light-emitting devices with iodogallium phthalocyanine layer

被引：7

作者：

Hashimoto, Y

Osato, Y

Tanaka, M

Hamagaki, M

Sakakibara, T

机构：

[1] Canon Inc, OL Project, Tokyo 1468501, Japan

[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[3] Chuo Univ, Fac Sci & Engn, Dept Elect Elect & Commun Engn, Bunkyo Ku, Tokyo 1128551, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 4A期

关键词：

organic light emitting diode; ITO; uv-ozone; oxygen plasma; iodogallium phthalocyanine;

D O I：

10.1143/JJAP.41.2249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the improvement of device lifetime by organic light-emitting devices with an iodogallium phthalocyanine (IGaPc) layer fabricated on indium tin oxide (ITO) treated with positive oxygen ions. The device performance improves markedly as follows: (a) long-term stability (an operational half-lifetime of 100 h at high current density of 100 mA/cm(2)), and (b) the driving voltage is unchanged. The change in the device characteristics is attributed to chancres in IGaPc molecular configurations during the growth process, leading to enhanced hole injection from the ITO to IGaPc layer.

引用

收藏

页码：2249 / 2251

页数：3

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