High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm

被引：5
|
作者：
Liao Yong-Ping [1 ,2 ]
Zhang Yu [1 ,2 ]
Yang Cheng-Ao [1 ,2 ]
Huang Shu-Shan [1 ,2 ]
Chai Xiao-Li [1 ,2 ]
Wang Cuo-Wei [1 ,2 ]
Xu Ying-Qiang [1 ,2 ]
Ni Hai-Qiao [1 ,2 ]
Niu Zhi-Chuan [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2016年 / 35卷 / 06期
基金：
中国国家自然科学基金;
关键词：
high power; laser diodes; infrared; quantum wells;
D O I：
10.11972/j.issn.10019014.2016.06.007
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
GaSb-based AIGaAsSb/InGaSb type-I quantum-wells (QW) 2 mu m laser diodes (LDs) have been grown by MBE system. Stripe-type waveguide LDs with facets uncoated were fabricated and characterized. For single LD device, the maximum output power was 1.058 W under continuous wave (CW) operation at working temperature of 20 degrees C. The maximum wall plug efficiency (WPE) was 20.2% and peak wavelength was 1.977 mu m with injection current 0.5 A. The output power under pulse mode of 1000 Hz in 5% duty cycles was 2.278 W.
引用
收藏
页码：672 / 675
页数：4
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