On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors

被引:18
作者
Arulkumaran, S [1 ]
Egawa, T [1 ]
Selvaraj, L [1 ]
Ishikawa, H [1 ]
机构
[1] Nagoya Inst Technol, Res Ctr Nano Device & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 8-11期
关键词
AlGaN/GaN HEMTs; GaN cap layer; gate-recess; drain current collapse; leakage current; trapping effect;
D O I
10.1143/JJAP.45.L220
中图分类号
O59 [应用物理学];
学科分类号
摘要
Influences of gate-recess etching with BCl3 plasma in drain current (I-D) collapse were performed oil different cap layers (i-GaN, n-GaN, and p-GaN) grown AlGaN/GaN high-electron-mobility transistors (HEMTs). Due to the decrease of dynamic-source-resistance by gate-recess, the increase of maximum drain current density and maximum extrinsic transconductance were observed in all cap layers grown AlGaN/GaN HEMTs. After gate-recess etching, about 14 and 17% of decrease in I-D collapse were observed on n-GaN and p-GaN cap layers HEMTs, respectively when compared to nonrecessed HEMTs. However, increase (similar to 47%) of I-D collapse was observed in i-GaN cap layer HEMTs. The decrease of I-D collapse in doped GaN cap layer HEMTs is possibly due to the compensation of dopant related traps with plasma induced traps. The increase of I-D collapse in i-GaN cap layer HEMTs may be due to the incorporation of damage related traps by gate-recess etching. The decrease and increase of trapping effects were qualitatively confirmed by white-light illuminated I-DS-V-DS characteristics. An increase of gate leakage Current in all recessed gate AlGaN/GaN HEMTs are due to the BCl3 plasma induced damage.
引用
收藏
页码:L220 / L223
页数:4
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