Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H-and 6H-silicon carbide

Intrinsic-related defect centers (IRDCs) in 4H-/6H-SiC are generated by implantation of helium ions, protons or by irradiation of high energy electrons. The formation and thermal stability of these centers are studied by deep level transient and positron annihilation spectroscopy subsequent to anneals at 600-1800degreesC. It turns out that the formation of IRDCs depends on the injected particle. Further we have identified defect centers which show identical temperature dependence of DLTS defect concentrations and positron capture rates. (C) 2001 Elsevier Science B.V. All rights reserved.