Ultra low thermal conductivity of disordered layered p-type bismuth telluride

被引：40

作者：

Grasso, Salvatore ^{[1
]}

Tsujii, Naohito ^{[3
]}

Jiang, Qinghui ^{[2
]}

Khaliq, Jibran ^{[2
]}

Maruyama, Satofumi ^{[3
]}

Miranda, Miriam ^{[4
]}

Simpson, Kevin ^{[5
]}

Mori, Takao ^{[3
]}

Reece, Michael J. ^{[1
,2
]}

机构：

[1] Nanoforce Technol Ltd, London E1 4NS, England

[2] Queen Mary Univ London, Sch Mat Sci & Engn, London E1 4NS, England

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[4] Univ London Imperial Coll Sci Technol & Med, Dept Mat, Ctr Adv Struct Ceram, London SW7 2AZ, England

[5] European Thermodynam Ltd, Leicester LE8 0RX, Leics, England

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2013年 / 1卷 / 12期

关键词：

INDUCED LATTICE-DEFECTS; FIGURE-OF-MERIT; THERMOELECTRIC PROPERTIES; N-TYPE; DEFORMATION; TEXTURE; ALLOYS; PERFORMANCE;

D O I：

10.1039/c3tc30152d

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Disordered layered p-type bismuth telluride was obtained by high pressure (1 GPa) and high strain deformation along the c-axis direction of commercially available single crystals. After initial deformation the p-type bismuth telluride flakes were subsequently fully densified by cold pressing (800 MPa at room temperature). As a result of the severe plastic deformation, the samples showed highly anisotropic electrical and thermal conductivities. In particular, the thermal conductivity measured along the pressing direction was as low as 0.34 W m(-1) K-1, which is one of the lowest values reported for fully dense p-type bismuth telluride. The full set of thermoelectric properties of the disordered bismuth antimony telluride is critically discussed.

引用

页码：2362 / 2367

页数：6

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