Study of LOCOS-induced anomalous leakage current in thin film SOI MOSFET's

被引：0
|
作者：
Kawanaka, S [1 ]
Onga, S
Okada, T
Oose, M
Iinuma, T
Shino, T
Yamada, T
Yoshimi, M
Watanabe, S
机构：
[1] R&D Ctr, Adv Semicond Device Lab, Kawasaki, Kanagawa 2108582, Japan
[2] R&D Ctr, Environm Engn Lab, Kawasaki, Kanagawa 2108582, Japan
[3] Toshiba Corp, Microelect Engn Lab, Kawasaki, Kanagawa 2108582, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1999年 / E82C卷 / 07期
关键词：
SOI; LOCOS isolation; crystal defect; leakage current; stress;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Anomalous leakage current which flows between source and drain in thin film SOI MOSFET's is investigated. It is confirmed that the leakage current is caused by enhanced diffusion of the source/drain dopants along the LOCOS-induced crystal defects. Stress analysis by 2D simulation reveals that thinning a buried-oxide effectively suppresses deformation of an SOI film associated with over-oxidation during LOGOS. It is experimentally confirmed that using a SIMOX substrate which has a thinner buried-oxide causes no noticeable deformation of the SOI film nor anomalous leakage current.
引用
收藏
页码：1341 / 1346
页数：6
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