Preparation of (100)-oriented LaNiO3 on Si for the textured Ba0.5Sr0.5TiO3 thin films

被引：5

作者：

Zhang, C. C. ^{[1
]}

Shi, J. C. ^{[1
]}

Yang, C. S. ^{[1
]}

Ding, G. F. ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Natl Key Lab Nano Micro Fabricat Technol, Key Lab Thin Film & Micro Fabricat, Minist Educ,Inst Micro & Nano Sci & Technol, Shanghai 200240, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Magnetron sputtering; Thin films; Oriented growth; Multilayer; Dielectric properties;

D O I：

10.1016/j.apsusc.2008.08.047

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Highly (1 0 0)-oriented LaNiO3 (LNO) thin films were grown on Pt(1 1 1)/SiO2/Si substrates by r. f. magnetron sputtering at substrate temperature ranging from 220 degrees C to 320 degrees C, and the preferred orientation of LNO was dominated by the substrate temperature. The oriented LaNiO3 served as a template for the subsequent (1 0 0)-oriented growth of deposited Ba0.5Sr0.5TiO3 (BST) thin film. Also, the tunability of BST thin film has been greatly improved with the insertion of (1 0 0)-textured LNO buffer layer. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：2773 / 2776

页数：4

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