Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d0 Semiconductors

被引：409

作者：

Peng, Haowei ^{[1
]}

Xiang, H. J. ^{[2
]}

Wei, Su-Huai ^{[2
]}

Li, Shu-Shen ^{[1
]}

Xia, Jian-Bai ^{[1
]}

Li, Jingbo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 01期

基金：

中国国家自然科学基金;

关键词：

COLLECTIVE ELECTRON FERROMAGNETISM; ENERGY; MODEL;

D O I：

10.1103/PhysRevLett.102.017201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The origin of ferromagnetism in d(0) semiconductors is studied using first-principles methods with ZnO as a prototype material. We show that the presence of spontaneous magnetization in nitrides and oxides with sufficient holes is an intrinsic property of these first-row d(0) semiconductors and can be attributed to the localized nature of the 2p states of O and N. We find that acceptor doping, especially doping at the anion site, can enhance the ferromagnetism with much smaller threshold hole concentrations. The quantum confinement effect also reduces the critical hole concentration to induce ferromagnetism in ZnO nanowires. The characteristic nonmonotonic spin couplings in these systems are explained in terms of the band coupling model.

引用

页数：4

共 23 条

[1] Magnetism in hafnium dioxide [J].

Coey, JMD ;

Venkatesan, M ;

Stamenov, P ;

Fitzgerald, CB ;

Dorneles, LS .

PHYSICAL REVIEW B, 2005, 72 (02)

[2] d0 ferromagnetism [J].

Coey, JMD .

SOLID STATE SCIENCES, 2005, 7 (06) :660-667

[3] Phenomenological band structure model of magnetic coupling in semiconductors [J].

Dalpian, Gustavo M. ;

Wei, Su-Huai ;

Gong, X. G. ;

da Silva, Antonio J. R. ;

Fazzio, A. .

SOLID STATE COMMUNICATIONS, 2006, 138 (07) :353-358

[4] Ferromagnetism driven by intrinsic point defects in HfO2 -: art. no. 217205 [J].

Das Pemmaraju, C ;

Sanvito, S .

PHYSICAL REVIEW LETTERS, 2005, 94 (21)

[5] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[6] Possible path to a new class of ferromagnetic and half-metallic ferromagnetic materials [J].

Elfimov, IS ;

Yunoki, S ;

Sawatzky, GA .

PHYSICAL REVIEW LETTERS, 2002, 89 (21)

[7]

Garcia MA, 2007, NANO LETT, V7, P1489, DOI 10.1021/nl070198m

[8] Room-temperature ferromagnetism observed in undoped semiconducting and insulating oxide thin films [J].

Hong, NH ;

Sakai, J ;

Poirot, N ;

Brizé, V .

PHYSICAL REVIEW B, 2006, 73 (13)

[9] Theory of ferromagnetic (III,Mn)V semiconductors [J].

Jungwirth, T. ;

Sinova, Jairo ;

Masek, J. ;

Kucera, J. ;

MacDonald, A. H. .

REVIEWS OF MODERN PHYSICS, 2006, 78 (03) :809-864

[10] From ultrasoft pseudopotentials to the projector augmented-wave method [J].

Kresse, G ;

Joubert, D .

PHYSICAL REVIEW B, 1999, 59 (03) :1758-1775

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