Ge-Rich Graded-Index SiGe Alloys: Exploring a Versatile Platform for mid-IR Photonics

被引:0
作者
Ramirez, J. M. [1 ]
Liu, Q. [1 ]
Vakarin, V. [1 ]
Frigerio, J. [2 ]
Ballabio, A. [2 ]
Chrastina, D. [2 ]
Le Roux, X. [1 ]
Alonso-Ramos, C. [1 ]
Isella, G. [2 ]
Vivien, L. [1 ]
Marris-Morini, D. [1 ]
机构
[1] Univ Paris Saclay, Ctr Nanosci & Nanotechnol, Univ Paris Sud, CNRS, F-91405 Orsay, France
[2] Politecn Milan, L NESS, Dipartimento Fis, Polo Como, Via Anzani 42, I-22100 Como, Italy
来源
2018 20TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) | 2018年
基金
欧洲研究理事会;
关键词
mid-IR integrated photonics; SiGe alloys; mid-IR spectroscopy; waveguides; interferometric optical devices; non-linear mid-IR photonics; WAVE-GUIDES; SILICON;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the recent progress on a new Ge-rich SiGe platform for mid-IR integrated photonics is presented. Low-loss spiral waveguides working over a broadband wavelength range are discussed, followed by a sensing proof-of-concept using a standalone photoresist with a known spectral absorption pattern. In addition, the development of new mid-IR interferometric devices for wavelength filtering and enhancement of the light-matter interaction are presented. Finally, efficient designs to exploit the third-order nonlinearities in these Ge-rich SiGe waveguides at mid-IR wavelengths are shown. The demonstration of these key building blocks will pave the way towards the implementation of new mid-IR photonic integrated systems with multiple functionalities.
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页数:4
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