Actively mode-locked strained-InGaAsP multiquantum-well lasers integrated with electroabsorption modulators and distributed Bragg reflectors

This paper describes picosecond pulse generation at 20 Gb/s by monolithic mode-locked lasers integrated with electroabsorption modulators and distributed Bragg reflectors. The electroabsorption modulator using strained-InGaAsP multiquantum wells acts as a pulse shortening gate when a sinusoidal voltage is driven at a large reverse bias voltage. To obtain transform-limited picosecond pulses, the required spectral bandwidth of the distributed Bragg reflector is estimated. Pulse generation around 4 ps with a time-bandwidth product of 0.5 has been performed at a repetition rate of 20 GHz. Driving conditions of the modulator, such as bias voltage and modulation frequency, are investigated. It is shown that an increase in the intensity noise is the main factor limiting performance.