Charge Pumping and Si-SiO2 Interface Traps Electrical Characterization

被引：1

作者：

Bauza, D. ^{[1
]}

机构：

[1] Minatec, IMEP LAHC, F-38016 Grenoble 1, France

来源：

DIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING | 2010年 / 28卷 / 02期

关键词：

PASSIVATION; EXTRACTION; DEFECTS; MOSFETS;

D O I：

10.1149/1.3372580

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

After recalling recent results obtained in the field of the electrical characterization of the Si-SiO2 interface traps in conventional MOS transistors and in MOSFET's having HfO2 as gate dielectric using the charge pumping (CP) technique, the paper focuses on the slope of the CP curves.

引用

页码：251 / 261

页数：11

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