Charge Pumping and Si-SiO2 Interface Traps Electrical Characterization

被引：1

作者：

Bauza, D. ^{[1
]}

机构：

[1] Minatec, IMEP LAHC, F-38016 Grenoble 1, France

来源：

DIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING | 2010年 / 28卷 / 02期

关键词：

PASSIVATION; EXTRACTION; DEFECTS; MOSFETS;

D O I：

10.1149/1.3372580

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

After recalling recent results obtained in the field of the electrical characterization of the Si-SiO2 interface traps in conventional MOS transistors and in MOSFET's having HfO2 as gate dielectric using the charge pumping (CP) technique, the paper focuses on the slope of the CP curves.

引用

页码：251 / 261

页数：11

共 21 条

[1] In-depth exploration of Si-SiO2 interface traps in MOS transistors using the charge pumping technique
Bauza, D
Maneglia, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (12) : 2262 - 2266
[2] Rigorous analysis of two-level charge pumping: Application to the extraction of interface trap concentration versus energy profiles in metal-oxide-semiconductor transistors
Bauza, D
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) : 3239 - 3248
[3] Advanced Analysis of Silicon Insulator Interface Traps in MOSFET's with SiO2 and with HfO2 as gate dielectrics
Bauza, D.
Ghobar, O.
Guenifi, N.
Bayon, S.
[J]. SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10, 2009, 19 (02): : 19 - 54
[4] A General and Reliable Model for Charge Pumping-Part I: Model and Basic Charge-Pumping Mechanisms
Bauza, Daniel
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (01) : 70 - 77
[5] CHARGE PUMPING IN MOS DEVICES
BRUGLER, JS
JESPERS, PGA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) : 297 - +
[6] PASSIVATION AND DEPASSIVATION OF SILICON DANGLING BONDS AT THE SI/SIO2 INTERFACE BY ATOMIC-HYDROGEN
CARTIER, E
STATHIS, JH
BUCHANAN, DA
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (11) : 1510 - 1512
[7] Derbyshire K., 2008, SOLID STATE TECHNOLO
[8] USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS
ELLIOT, ABM
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 241 - 247
[9] NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS
GHIBAUDO, G
[J]. ELECTRONICS LETTERS, 1988, 24 (09) : 543 - 545
[10] Defects in the interfacial layer of SiO2-HfO2 gate stacks:: Depth distribution and indentification
Ghobar, O.
Bauza, D.
Guillaumot, B.
[J]. 2007 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2007, : 94 - +

← 1 2 3 →