Surface conductive layers on oxidized (111) diamonds

被引：17

作者：

Ri, SG ^{[1
]}

Takeuchi, D ^{[1
]}

Kato, H ^{[1
]}

Ogura, M ^{[1
]}

Makino, T ^{[1
]}

Yamasaki, S ^{[1
]}

Okushi, H ^{[1
]}

Rezek, B ^{[1
]}

Nebel, CE ^{[1
]}

机构：

[1] Natl Inst AIST, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 26期

关键词：

D O I：

10.1063/1.2158020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface conductive layers (SCL) on oxidized (111) diamonds with smooth surfaces after exposure to air were detected and characterized by Hall effect measurements. Hall effect measurements show that the conductivity is p type with sheet hole concentrations around of 10(12) cm(-2) and Hall mobilities between 5 and 130 cm(2)/V s. The SCL vanishes by thermal annealing at a temperature higher than 460 K in He atmosphere, and recovers in air. These characteristics are similar to those generated by hydrogen termination. The experiments revealed that these SCLs are present on boron doped (111) and undoped (111) diamond films with smooth surfaces and natural IIa (111) diamonds, but not on (111) diamond films with rough surfaces and not on (100) diamonds. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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