Effect of annealing temperature on the copper nanoparticles deposited on the silicon nanoporous pillar array

被引：7
作者：
Yang, Xiao Hui [1 ]
Zeng, Fan Guang [2 ]
Li, Xin Jian [3 ,4 ]
机构：
[1] N China Inst Water Conservancy & Hydroelect Power, Dept Math & Informat Sci, Zhengzhou 450011, Peoples R China
[2] Zhengzhou Inst Aeronaut Ind Management, Zhengzhou 450015, Peoples R China
[3] Zhengzhou Univ, Dept Phys, Zhengzhou 450052, Peoples R China
[4] Zhengzhou Univ, Phys Mat Lab, Zhengzhou 450052, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Copper/silicon nanocomposite system (Cu/Si-NPA); Annealing; Ostwald ripening; Particle migration and coalescence; SILVER NANOPARTICLES; POROUS SILICON; METAL;
D O I：
10.1016/j.mssp.2012.07.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Copper/silicon nanocomposite system (Cu/Si-NPA) is prepared by immersion plating Cu nanoparticles on silicon nanoporous pillar array (Si-NPA). The Cu/Si-NPA samples are heated under nitrogen for 2 h at elevated temperatures of 400 degrees C, 600 degrees C. and 800 degrees C. The morphological changes of Cu nanoparticles before and after heat treatments are characterized by SEM. The crystallinity and the average size of Cu nanoparticles before and after heat treatments are studied by XRD. The results show that two possible mechanisms, Ostwald ripening, and particle migration and coalescence, are believed to be responsible for the ripening of annealed Cu nanoparticles at different annealing temperatures. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：10 / 14
页数：5
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